The PMN-PT material is of interest as a relaxor-ferroelectrics material for applications as the ferroelectric layer with a large piezoelectric composition. The electric field control of magnetism also known as converse magnetoelectric coupling has potential for next-generation memory storage and sensing technologies. Using scanning transmission electron microscopy and phase-field simulations, they clarified the membrane response to understand the microstructural behavior of PMN-PT thin films, to then employ them in piezo-driven magnetoelectric heterostructures. The team used an ideal ferroelectric layer of Pb(Mg 1/3Nb 2/3)O 3–PbTiO 3 abbreviated PMN-PT during this work and coupled it with ferromagnetic nickel overlayers to create membrane heterostructures with magnetization. and Korea, displayed low-voltage magnetoelectric coupling in an all-thin-film heterostructure using anisotropic strains induced by the orientation of the material. In a new report now published in Science Advances, Shane Lindemann and a research team in materials science, and physics in the U.S. In addition to that, thin films are ineffective from substrate clamping and can substantially reduce piezoelectric in-plane strains. Although the properties of relaxor ferroelectrics are known, their mechanistic origins remain a mystery, giving rise to an enigmatic form of materials. Relaxor-ferroelectrics that exhibit high electrostriction are ideal candidates for ferroelectric layer constructs due to their large piezoelectricity. Ferroelectrics are materials that can maintain spontaneous and reversible electric polarization.
Strain-mediated magnetic coupling in ferroelectric and ferromagnetic heterostructures can offer a unique opportunity for scientific research in low-power multifunctional devices. Credit: Science Advances, 10.1126/sciadv.abh2294 (C) Plots of linear electrostriction strains εxx and εyy and the anisotropic strain εxx − εyy for RIP, RUP, and OUP polarization groups. In-plane projections of polarization vectors are shown for RIP (light orange) and RUP (light blue). The down deformations are identical to up. (B) Electrostrictive deformations (not to scale) of the unit cell for the cubic (zero FE polarization), RIP, RUP, and OUP polarization groups.
The in-plane cut through the unit cell (shaded gray area) is rectangular with sides of length a2–√by a, where a is the lattice parameter. Rhombohedral down (RDOWN) and orthorhombic down (ODOWN) are not shown but are, respectively, RUP and OUP mirrored about the xy plane. Polarization directions in (011)-oriented PMN-PT unit cell, grouped into rhombohedral in-plane (RIP orange), rhombohedral up (RUP blue), and orthorhombic up (OUP purple). (A) Cartesian coordinates x, y, and z are defined to be the crystal, and directions, respectively. Anisotropic strain in (011)-oriented PMN-PT.
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